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| BDS16 BDS16SMD BDS17 BDS17SMD MECHANICAL DATA Dimensions in mm 1 0.6 0.8 4.6 16.5 3.6 Dia. 1 3 .5 1 0 .6 SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES FEATURES 123 1 3 .7 0 1.0 2 .5 4 BSC 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 2. 70 BSC * * * * * HERMETIC METAL OR CERAMIC PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS SCREENING TO CECC LEVELS FULLY ISOLATED (METAL VERSION) 3 .6 0 (0 .1 4 2 ) M ax. 1 3 0 .7 6 (0 .0 3 0 ) m in . APPLICATIONS 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 2 * POWER LINEAR AND SWITCHING APPLICATIONS * GENERAL PURPOSE POWER 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 1) 9) 6) 4) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) TO220M SMD1 Pin 1 - Base - TO220 Metal Package - Isolated - Ceramic Surface Mount Package Pin 2 - Collector Pin 3 - Emitter ABSOLUTE MAXIMUM RATINGS (Tcase=25C unless otherwise stated) VCBO VCEO VEBO IE , IC IB Ptot Tstg Tj Semelab plc. Collector - Base voltage (IE = 0) Collector - Emitter voltage (IB = 0) Emitter - Base voltage (IC = 0) Emitter , Collector current Base current Total power dissipation at Tcase 75C Storage Temperature Junction Temperature Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk BDS16 120V 120V BDS17 150V 150V 5V 8A 2A 50W -65 TO 200C 200C Prelim. 7/00 BDS16 BDS16SMD BDS17 BDS17SMD ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter ICBO ICEO IEBO VCEO(sus)* VCE(sat)* VBE(on)* hFE* fT Collector cut-off current (IE = 0) Collector cut-off current (IB = 0) Emitter cut-off current (IC = 0) Collector - Emitter sustaining voltage (IB = 0) Collector - Emitter saturation voltage Base - Emitter voltage DC Current gain Transition frequency Test Conditions BDS16 BDS17 BDS16 BDS17 VEB = 5V BDS16 BDS17 IC = 1A IC = 1A IC = 0.5A IC = 4A IC = 0.5A IC = 100mA IB = 0.1A VCE = 2V VCE = 2V VCE = 2V VCE = 10V VCB = 120V VCB = 150V VCE = 60V VCE = 75V Min. Typ. Max. 20 20 0.1 0.1 10 Unit mA mA mA V 120 150 0.5 1.0 250 150 V V V 40 15 30 MHz *Pulsed : Pulse duration = 300 ms , duty cycle = 1.5% SWITCHING CHARACTERISTICS Parameter ton ts tf On Time Storage Time Fall Time (td + tr) Test Conditions IC = 2A VCC = 80V IB1 = 0.2A IC = 2A VCC = 80V IB1 = -IB2 = 0.2A Max. 0.5 3.0 0.4 Unit ms ms ms THERMAL DATA RTHj-case RTHj-a Thermal resistance junction - case Thermal resistance junction - ambient Max. 2.5C/W Max. 62.5C/W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 7/00 |
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